Datasheet > NVIS1D9N04CTXX

NVIS1D9N04CTXX

更新时间： 2024-09-17 19:38:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	171K
描述
Power Field-Effect Transistor

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NVIS1D9N04CTXX 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

NVIS1D9N04CTXX 数据手册

MOSFET – Power, Single,

N-Channel

40 V, 1.9 mW, 248 A

Product Preview

NVIS1D9N04C

www.onsemi.com

Features

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

(BR)DSS

DS(on)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

40 V

1.9 mW @ 10 V

248 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

248

154

117

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

rent R

(Notes 1, 3)

N−CHANNEL MOSFET

Steady

State

Power Dissipation R

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

I2PAK

CASE 418AV

Power Dissipation R

(Notes 1, 2)

T = 25°C

3.125

1.56

900

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

MARKING DIAGRAM

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

175

&Z&3&K

NVIS

1D9N04C

Source Current (Body Diode)

130

420

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, I

= 25 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Plant Code

= Numeric Date Code

= Lot Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NVIS1D9N04C = Specific Device Code

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.28

Unit

Junction−to−Case (Drain) (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

January, 2020 − Rev. P1

NVIS1D9N04C/D

12 3 4 5 6 7

中文翻译

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