NTJD4152P, NVJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P−Channel,
ESD Protected SC−88
Features
• Leading Trench Technology for Low R
Performance
DS(ON)
www.onsemi.com
• Small Footprint Package (SC70−6 Equivalent)
• ESD Protected Gate
V
R
Typ
I Max
D
(BR)DSS
DS(on)
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
215 mW @ −4.5 V
345 mW @ −2.5 V
−20 V
−0.88 A
• These are Pb−Free Devices
Applications
600 mW @ −1.8 V
• Load/Power Management
• Charging Circuits
S
1
2
3
6
5
4
D
1
1
• Load Switching
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
G
G
2
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
1
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−20
Unit
V
V
DSS
D
S
2
2
Gate−to−Source Voltage
V
GS
12
V
Continuous Drain
Current (Note 1)
Steady T = 25°C
I
−0.88
−0.63
0.272
0.141
−1.0
−0.72
0.35
0.181
3.0
A
A
D
State
Top View
T = 85°C
A
Power Dissipation
(Note 1)
Steady T = 25°C
P
W
A
A
D
D
MARKING DIAGRAM &
PIN ASSIGNMENT
State
T = 85°C
A
Continuous Drain
Current (Note 2)
t v 5 s T = 25°C
I
D
A
D1 G2 S2
6
T = 85°C
A
1
Power Dissipation
(Note 2)
t v 5 s T = 25°C
P
W
A
SC−88/SOT−363
CASE 419B
STYLE 26
XXX MG
G
T = 85°C
A
Pulsed Drain Current
t ≤ 10 ms
I
A
DM
1
S1 G1 D2
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
T
STG
XXX
M
G
= Device Code
= Date Code
= Pb−Free Package
Continuous Source Current (Body Diode)
I
S
−0.48
260
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°C
T
L
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Junction−to−Ambient – Steady State
Junction−to−Ambient − t v 5 s
Junction−to−Lead – Steady State
R
R
460 °C/W
357
q
q
JA
JA
R
226
q
JL
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
February, 2015 − Rev. 6
NTJD4152P/D