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NVJD4152P PDF预览

NVJD4152P

更新时间: 2024-11-20 01:16:15
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安森美 - ONSEMI /
页数 文件大小 规格书
5页 75K
描述
Trench Small Signal MOSFET

NVJD4152P 数据手册

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NTJD4152P, NVJD4152P  
Trench Small Signal  
MOSFET  
20 V, 0.88 A, Dual P−Channel,  
ESD Protected SC−88  
Features  
Leading Trench Technology for Low R  
Performance  
DS(ON)  
www.onsemi.com  
Small Footprint Package (SC70−6 Equivalent)  
ESD Protected Gate  
V
R
Typ  
I Max  
D
(BR)DSS  
DS(on)  
NV Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
215 mW @ −4.5 V  
345 mW @ −2.5 V  
−20 V  
−0.88 A  
These are Pb−Free Devices  
Applications  
600 mW @ −1.8 V  
Load/Power Management  
Charging Circuits  
S
1
2
3
6
5
4
D
1
1
Load Switching  
Cell Phones, Computing, Digital Cameras, MP3s and PDAs  
G
G
2
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
1
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−20  
Unit  
V
V
DSS  
D
S
2
2
Gate−to−Source Voltage  
V
GS  
12  
V
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
−0.88  
−0.63  
0.272  
0.141  
−1.0  
−0.72  
0.35  
0.181  
3.0  
A
A
D
State  
Top View  
T = 85°C  
A
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
W
A
A
D
D
MARKING DIAGRAM &  
PIN ASSIGNMENT  
State  
T = 85°C  
A
Continuous Drain  
Current (Note 2)  
t v 5 s T = 25°C  
I
D
A
D1 G2 S2  
6
T = 85°C  
A
1
Power Dissipation  
(Note 2)  
t v 5 s T = 25°C  
P
W
A
SC−88/SOT−363  
CASE 419B  
STYLE 26  
XXX MG  
G
T = 85°C  
A
Pulsed Drain Current  
t 10 ms  
I
A
DM  
1
S1 G1 D2  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
XXX  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
Continuous Source Current (Body Diode)  
I
S
−0.48  
260  
A
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
(Note: Microdot may be in either location)  
THERMAL RESISTANCE RATINGS (Note 1)  
Parameter  
Symbol Max Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Junction−to−Ambient – Steady State  
Junction−to−Ambient − t v 5 s  
Junction−to−Lead – Steady State  
R
R
460 °C/W  
357  
q
q
JA  
JA  
R
226  
q
JL  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces), steady state.  
2. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
February, 2015 − Rev. 6  
NTJD4152P/D  
 

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