Datasheet > NVJD4158C

NVJD4158C

更新时间： 2024-11-20 01:16:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	91K
描述
Small Signal MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVJD4158C 数据手册

NTJD4158C, NVJD4158C

Small Signal MOSFET

30 V/−20 V, +0.25/−0.88 A,

Complementary, SC−88

Features

• Leading 20 V Trench for Low R

• ESD Protected Gate

Performance

DS(on)

www.onsemi.com

• SC−88 Package for Small Footprint (2 x 2 mm)

Typ

I Max

(BR)DSS

DS(on)

• NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

1.0 W @ 4.5 V

1.5 W @ 2.5 V

N−Ch

30 V

0.25 A

215 mW @ −4.5 V

345 mW @ −2.5 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

P−Ch

−20 V

−0.88 A

Compliant

Applications

• DC−DC Conversion

SC−88 (SOT−363)

(6−Leads)

• Load/Power Management

• Load Switch

• Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

N−Ch

P−Ch

N−Ch

P−Ch

−20

DSS

Gate−to−Source Voltage

(Top View)

N−Channel

Continuous Drain

Current (Note 1)

T = 25°C

0.25

Steady

State

MARKING DIAGRAM &

PIN ASSIGNMENT

T = 85°C

0.18

−0.88

−0.63

0.27

D1 G2 S2

P−Channel

Continuous Drain

Current (Note 1)

T = 25°C

Steady

State

T = 85°C

XXX MG

Power Dissipation

(Note 1)

Steady

State

SC−88 (SOT−363)

CASE 419B

T = 25°C

STYLE 26

Pulsed Drain Cur-

rent

N−Ch

P−Ch

0.5

S1 G1 D2

tp = 10 ms

−3.0

XXX

= Specific Device Code

= Date Code

= Pb−Free Package

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

stg

Source Current (Body Diode)

N−Ch

P−Ch

0.25

−0.48

260

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

THERMAL RESISTANCE RATINGS

Parameter

dimensions section on page 6 of this data sheet.

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

460

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

Febuary, 2015 − Rev. 5

NTJD4158C/D

12 3 4 5 6 7

中文翻译

下载PDF

与NVJD4158C相关器件

型号	品牌	获取价格	描述	数据表
NVJD4158CT1G	ONSEMI	获取价格	Small Signal MOSFET
NVJD4401N	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual NâChannel, S
NVJD4401NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual NâChannel, S
NVJD5121N	ONSEMI	获取价格	Power MOSFET
NVJD5121NT1G	ONSEMI	获取价格	Power MOSFET
NVJD5121NT2G	ONSEMI	获取价格	双 N 沟道功率 MOSFET，带 ESD 防护 60V，295mA，1.6Ω
NVJS3151P	ONSEMI	获取价格	Trench Power MOSFET
NVJS3151PT1G	ONSEMI	获取价格	Trench Power MOSFET
NVJS4151PT1G	ONSEMI	获取价格	单 P 沟道，沟槽功率 MOSFET，-20V，-4.1A，67mΩ
NVJS4405NT1G	ONSEMI	获取价格	Single N-Channel Small Signal MOSFET 25V, 1.2

与NVJD4158C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

NVJD4158C

NVJD4158C 数据手册

与NVJD4158C相关器件

与NVJD4158C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVJD4158C

NVJD4158C 数据手册

与NVJD4158C相关器件

与NVJD4158C相关文章

您还可以找

您在本页遇到什么问题？