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NVHL075N065SC1 PDF预览

NVHL075N065SC1

更新时间： 2024-11-20 11:12:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 220K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 57 mohm, 650 V, M2, TO247-3L

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NVHL075N065SC1 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - SiC Power, Single  
N-Channel, TO247-3L  
650 V, 57 mW, 38 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
650 V  
85 mꢀ @ 18 V  
38 A  
D
NVHL075N065SC1  
Features  
• Typ. R  
= 57 mꢀ @ V = 18 V  
GS  
= 75 mꢀ @ V = 15 V  
GS  
DS(on)  
G
Typ. R  
DS(on)  
• Ultra Low Gate Charge (Q  
= 61 nC)  
G(tot)  
S
• Low Output Capacitance (C = 107 pF)  
oss  
• 100% Avalanche Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Pb−Free and is RoHS Compliant  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC/DC Converter for EV/HEV  
G
D
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
TO−247 Long Leads  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
650  
Unit  
V
CASE 340CX  
V
DSS  
Gate−to−Source Voltage  
V
−8/+22  
−5/+18  
V
GS  
MARKING DIAGRAM  
Recommended Operation Values  
of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
V
C
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
38  
148  
26  
A
W
A
C
D
HL075N  
065SC1  
AYWWZZ  
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
Power Dissipation  
(Note 1)  
P
74  
W
A
D
Pulsed Drain Current  
(Note 2)  
T
C
= 25°C  
I
120  
HL075N65SC1= Specific Device Code  
DM  
A
= Assembly Location  
YWW  
ZZ  
= Data Code (Year & Week)  
= Assembly Lot  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
34  
83  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
ORDERING INFORMATION  
Energy (I  
= 12.9 A, L = 1 mH) (Note 3)  
L(pk)  
Device  
NVHL075N065SC1  
Package  
Shipping  
Maximum Lead Temperature for Soldering  
T
260  
°C  
L
(1/8″ from case for 5 s)  
TO247−3L  
30 Units /  
Tube  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. EAS of 83 mJ is based on starting T = 25°C; L = 1 mH, I = 12.9 A,  
J
AS  
V
DD  
= 50 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
December, 2021 − Rev. 0  
NVHL075N065SC1/D  
 
12345678

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