Datasheet > NVHL060N065SC1

NVHL060N065SC1

更新时间： 2024-11-24 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	210K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L

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NVHL060N065SC1 数据手册

DATA SHEET

www.onsemi.com

MOSFET - SiC Power, Single

N-Channel, TO247-3L

650 V, 44 mW, 47 A

MAX

I MAX

(BR)DSS

DS(ON)

650 V

70 mꢀ @ 18 V

47 A

N−CHANNEL MOSFET

NVHL060N065SC1

Features

• Typ. R

= 44 mꢀ @ V = 18 V

= 60 mꢀ @ V = 15 V

DS(on)

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 74 nC)

G(tot)

• High Speed Switching with Low Capacitance (C = 133 pF)

oss

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

TO−247−3LD

CASE 340CX

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

DSS

Gate−to−Source Voltage

−8/+22

−5/+18

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

MARKING DIAGRAM

Continuous Drain

Current (Note 1)

Steady

State

176

Power Dissipation

(Note 1)

HL060N

065SC1

AYWWZZ

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

Power Dissipation

(Note 1)

Pulsed Drain Current

(Note 2)

= 25°C

143

HL060N065SC1 = Specific Device Code

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= Assembly Location

= Year

WW = Work Week

Source Current (Body Diode)

= Lot Traceability

Single Pulse Drain−to−Source Avalanche

Energy (I

= 10.1 A, L = 1 mH) (Note 3)

L(pk)

Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s)

260

°C

ORDERING INFORMATION

Device

NVHL060N065SC1

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO247−3L

30 Units /

Tube

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 51 mJ is based on starting T = 25°C; L = 1 mH, I = 10.1 A,

= 50 V, V = 18 V.

Publication Order Number:

December, 2021 − Rev. 0

NVHL060N065SC1/D

12 3 4 5 6 7 8

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与NVHL060N065SC1相关器件

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