Datasheet > NVHL025N065SC1

NVHL025N065SC1

更新时间： 2024-11-06 11:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	227K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 25mohm, 650V, M2, TO247-3L

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NVHL025N065SC1 数据手册

DATA SHEET

www.onsemi.com

MOSFET - SiC Power, Single

N-Channel, TO247-3L

650 V, 19 mW, 99 A

MAX

I MAX

(BR)DSS

DS(ON)

650 V

28.5 mꢀ @ 18 V

99 A

NVHL025N065SC1

Features

• Typ. R

= 19 mꢀ @ V = 18 V

= 25 mꢀ @ V = 15 V

DS(on)

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 164 nC)

• Low Capacitance (C = 278 pF)

G(tot)

oss

• 100% Avalanche Tested

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

TO−247−3LD

CASE 340CX

DSS

Gate−to−Source Voltage

−8/+22

−5/+18

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

MARKING DIAGRAM

Continuous Drain

Current (Note 1)

Steady

State

348

Power Dissipation

(Note 1)

HL025N

065SC1

$Y&Z&3&K

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

Power Dissipation

(Note 1)

174

323

Pulsed Drain Current

(Note 2)

= 25°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

H4L025065SC1 = Specific Device Code

+175

= Assembly Location

= Year

Source Current (Body Diode)

WW = Work Week

Single Pulse Drain−to−Source Avalanche

= Lot Traceability

Energy (I

= 11.2 A, L = 1 mH) (Note 3)

L(pk)

Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s)

260

°C

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

NVHL025N065SC1

Package

Shipping

TO247−3L

30 Units /

Tube

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 62 mJ is based on starting T = 25°C; L = 1 mH, I = 11.2 A,

= 50 V, V = 18 V.

Publication Order Number:

January, 2022 − Rev. 1

NVHL025N065SC1/D

12 3 4 5 6 7 8

中文翻译

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与NVHL025N065SC1相关器件

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