Datasheet > NVHL055N60S5F

NVHL055N60S5F

更新时间： 2024-11-20 11:16:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	357K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 45 A, 55 mΩ, TO-247

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www.onsemi.com

MOSFET – Power, Single

N-Channel, SUPERFET⁾V,

FRFET⁾, TO247-3L

600 V, 55 mW, 45 A

MAX

I MAX

DSS

DS(ON)

600 V

55 mW @ 10 V

45 A

NVHL055N60S5F

Description

The SUPERFET V MOSFET FRFET series has optimized body

diode performance characteristics. This can allow for the removal of

components in the application and improve application performance

and reliability, particularly when soft switching topologies are used.

POWER MOSFET

Features

• 650 V @ T = 150°C / Typ. R

= 44 mW

DS(on)

• 100% Avalanche Tested

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Electric Vehicle On Board Chargers

• EV Main Battery DC/DC Converters

TO−247 Long Leads

CASE 340CX

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

MARKING DIAGRAM

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

V055N

60S5F

AYWWZZ

Power Dissipation

278

159

Pulsed Drain Current

= 25°C,

= 10 ms

Pulsed Source Current

(Body Diode)

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

V055N60S5F = Specific Device Code

YWW

= Assembly Location

= Data Code (Year & Week)

= Assembly Lot

Source Current (Body Diode)

Single Pulse Avalanche

Energy

(I = 7 A,

417

= 25 W)

Avalanche Current

ORDERING INFORMATION

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

2.78

120

Device

NVHL055N60S5F

Package

Shipping

dvdt

V/ns

TO−247

30 Units / Tube

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 22.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

May, 2022 − Rev. 1

NVHL055N60S5F/D

12 3 4 5 6 7...9

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