DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FRFET), TO247-3L
600 V, 40 mW, 59 A
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
40 mW @ 10 V
59 A
D
NVHL040N60S5F
G
Description
The SUPERFET V MOSFET FRFET series has optimized body
diode performance characteristics. This can allow for the removal of
components in the application and improve application performance
and reliability, particularly when soft switching topologies are used.
S
POWER MOSFET
Features
• 650 V @ T = 150°C / Typ. R
= 32 mW
J
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
D
S
• Electric Vehicle On Board Chargers
• EV Main Battery DC/DC Converters
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
V
GSS
MARKING DIAGRAM
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
59
A
C
D
T
C
37
V040N
60S5F
AYWWZZ
Power Dissipation
T
C
T
C
T
C
P
347
209
209
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Range
V040N60S5F = Specific Device Code
A
YWW
ZZ
= Assembly Location
= Date Code (Year & Week)
= Assembly Lot
Source Current (Body Diode)
I
59
A
S
Single Pulse Avalanche
Energy
I = 8.3 A,
G
E
AS
574
mJ
L
R
= 25 W
Avalanche Current
I
8.3
3.47
120
70
A
AS
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
ORDERING INFORMATION
dv/dt
V/ns
Device
NVHL040N60S5F
Package
Shipping
Peak Diode Recovery dv/dt (Note 2)
TO−247
30 Units / Tube
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 29.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2022 − Rev. 1
NVHL040N60S5F/D