5秒后页面跳转
NVHL040N60S5F PDF预览

NVHL040N60S5F

更新时间: 2024-11-20 11:11:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 348K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 59 A, 40 mΩ, TO-247

NVHL040N60S5F 数据手册

 浏览型号NVHL040N60S5F的Datasheet PDF文件第2页浏览型号NVHL040N60S5F的Datasheet PDF文件第3页浏览型号NVHL040N60S5F的Datasheet PDF文件第4页浏览型号NVHL040N60S5F的Datasheet PDF文件第5页浏览型号NVHL040N60S5F的Datasheet PDF文件第6页浏览型号NVHL040N60S5F的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, SUPERFET) V,  
FRFET), TO247-3L  
600 V, 40 mW, 59 A  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
600 V  
40 mW @ 10 V  
59 A  
D
NVHL040N60S5F  
G
Description  
The SUPERFET V MOSFET FRFET series has optimized body  
diode performance characteristics. This can allow for the removal of  
components in the application and improve application performance  
and reliability, particularly when soft switching topologies are used.  
S
POWER MOSFET  
Features  
650 V @ T = 150°C / Typ. R  
= 32 mW  
J
DS(on)  
100% Avalanche Tested  
PbFree, Halogen Free/BFR Free and are RoHS Compliant  
Applications  
G
D
S
Electric Vehicle On Board Chargers  
EV Main Battery DC/DC Converters  
TO247 Long Leads  
CASE 340CX  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
600  
30  
Unit  
V
V
DSS  
V
GSS  
MARKING DIAGRAM  
GatetoSource Voltage  
DC  
V
AC (f > 1 Hz)  
30  
Continuous Drain Current  
T
= 25°C  
= 100°C  
= 25°C  
= 25°C  
= 25°C  
I
59  
A
C
D
T
C
37  
V040N  
60S5F  
AYWWZZ  
Power Dissipation  
T
C
T
C
T
C
P
347  
209  
209  
W
A
D
Pulsed Drain Current (Note 1)  
I
DM  
Pulsed Source Current  
(Body Diode) (Note 1)  
I
A
SM  
Operating Junction and Storage Temperature T , T  
55 to  
+150  
°C  
J
STG  
Range  
V040N60S5F = Specific Device Code  
A
YWW  
ZZ  
= Assembly Location  
= Date Code (Year & Week)  
= Assembly Lot  
Source Current (Body Diode)  
I
59  
A
S
Single Pulse Avalanche  
Energy  
I = 8.3 A,  
G
E
AS  
574  
mJ  
L
R
= 25 W  
Avalanche Current  
I
8.3  
3.47  
120  
70  
A
AS  
Repetitive Avalanche Energy (Note 1)  
MOSFET dv/dt  
E
mJ  
AR  
ORDERING INFORMATION  
dv/dt  
V/ns  
Device  
NVHL040N60S5F  
Package  
Shipping  
Peak Diode Recovery dv/dt (Note 2)  
TO247  
30 Units / Tube  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 seconds)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulsewidth limited by maximum junction temperature.  
2. I 29.5 A, di/dt 200 A/ms, V 400 V, starting T = 25°C.  
SD  
DD  
J
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
May, 2022 Rev. 1  
NVHL040N60S5F/D  
 

与NVHL040N60S5F相关器件

型号 品牌 获取价格 描述 数据表
NVHL040N65S3 ONSEMI

获取价格

MOSFET – Power, N-Channel, SUPERFET® III,Auto
NVHL040N65S3F ONSEMI

获取价格

Single N-Channel Power MOSFET SUPERFET ® III,
NVHL040N65S3HF ONSEMI

获取价格

Single N-Channel Power MOSFET SUPERFET ® III,
NVHL045N065SC1 ONSEMI

获取价格

Power Field-Effect Transistor
NVHL050N65S3F ONSEMI

获取价格

N-Channel, SUPERFET III MOSFETm 650V, 50 mΩ,
NVHL050N65S3HF ONSEMI

获取价格

Power Mosfet - N‐Channel, SUPERFET III, FRFET
NVHL055N60S5F ONSEMI

获取价格

Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NVHL060N065SC1 ONSEMI

获取价格

Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVHL060N090SC1 ONSEMI

获取价格

Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVHL065N65S3F ONSEMI

获取价格

SUPERFET III MOSFET, 650V, 65mohm