Datasheet > NVHL020N090SC1

NVHL020N090SC1

更新时间： 2024-11-06 11:13:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	332K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel- EliteSiC, 20 mohm, 900 V, M2, TO247−3L

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NVHL020N090SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 20 mohm, 900 V,

M2, TO-247-3L

MAX

I MAX

(BR)DSS

DS(ON)

900 V

28 mW @ 15 V

118 A

NVHL020N090SC1

Features

• Typ. R

= 20 mW @ V = 15 V

DS(on)

= 16 mW @ V = 18 V

• Ultra Low Gate Charge (typ. Q

= 196 nC)

G(tot)

• Low Effective Output Capacitance (typ. C = 296 pF)

• 100% UIL Tested

oss

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC-DC Converter for EV/HEV

TO−247 LONG LEADS

CASE 340CX

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

MARKING DIAGRAM

DSS

900

Gate−to−Source Voltage

+22/−8

+15/−5

Recommended Operation

Values of Gate−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current R

Steady

State

118

503

$Y&Z&3&K

NVHL020

N090SC1

Power Dissipation

Continuous Drain

Current R

Steady

State

= 100°C

Power Dissipation

251

= onsemi Logo

= Assembly Plant Code

= Date Code (Year & Week)

= Lot

Pulsed Drain Current (Note 2)

T = 25°C

472

854

Single Pulse Surge

Drain Current

Capability(Note 3)

T = 25°C, t = 10 ms,

DSC

NVHL020N090SC1 = Specific Device Code

= 4.7 W

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

ORDERING INFORMATION

Source Current (Body Diode)

153

264

Device

Package

Shipping

Single Pulse Drain−to−Source Avalanche

NVHL020N090SC1

TO−247

Long Lead

30 Units /

Tube

Energy (I = 23 A , L = 1 mH) (Note 4)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values

shown, they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. Peak current might be limited by transconductance.

4. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,

= 100 V, V = 15 V.

Publication Order Number:

May, 2022 − Rev. 3

NVHL020N090SC1/D

12 3 4 5 6 7 8

中文翻译

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