Datasheet > NVHL015N065SC1

NVHL015N065SC1

更新时间： 2024-11-24 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	307K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−3L

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NVHL015N065SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 12 mohm, 650 V,

M2, TO-247-3L

MAX

I MAX

(BR)DSS

DS(ON)

650 V

18 mꢀ @ 18 V

163 A

N−CHANNEL MOSFET

NVHL015N065SC1

Features

• Typ. R

= 12 mꢀ @ V = 18 V

= 15 mꢀ @ V = 15 V

DS(on)

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 283 nC)

G(tot)

• High Speed Switching with Low Capacitance (C = 430 pF)

oss

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC-DC Converter for EV/HEV

• Automotive Traction Inverter

TO−247−3LD

CASE 340CX

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

650

MARKING DIAGRAM

Gate−to−Source Voltage

−8/+22

−5/+18

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 1)

Steady

State

163

643

115

321

484

798

HL015N

065SC1

$Y&Z&3&K

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

Power Dissipation

(Note 1)

Pulsed Drain Current

(Note 2)

= 25°C

HL015N065SC1

= Specific Device Code

= onsemi Logo

Single Pulse Surge

Drain Current Capability

T = 25°C, t = 10 ꢁ s,

DSC

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

= 4.7

ꢀ

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

157

Single Pulse Drain−to−Source Avalanche

ORDERING INFORMATION

Energy (I

= 13 A, L = 1 mH) (Note 3)

L(pk)

Device

Package

Shipping

Maximum Lead Temperature for Soldering

300

°C

(1/8″ from case for 5 s)

NVHL015N065SC1

TO−247

Long Lead

30 Units /

Tube

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 84 mJ is based on starting T = 25°C; L = 1 mH, I = 13 A,

= 50 V, V = 18 V.

Publication Order Number:

May, 2022 − Rev. 3

NVHL015N065SC1/D

12 3 4 5 6 7 8

中文翻译

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