Datasheet > NTVS3141P_09

NTVS3141P_09

更新时间： 2024-11-14 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	127K
描述
−20 V, −3.7 A, 85 m, Single P−Channel, CSP 1.0x1.5x0.65 mm

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中文翻译

获取价格

数据手册

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NTVS3141P_09 数据手册

NTVS3141P

Power MOSFET

−20 V, −3.7 A, 85 mW, Single P−Channel,

CSP 1.0x1.5x0.65 mm

Features

• Low R

at Low Gate Voltage

http://onsemi.com

DS(on)

• Chip Scale Packaging

MAX

I MAX

(Note 1)

• High Power Density (A/mm )

• This is a Pb−Free Device

(BR)DSS

DS(ON)

85 mΩ @ −4.5 V

123 mΩ @ −2.5 V

150 mΩ @ −1.8 V

200 mΩ @ −1.5 V

Applications

• Load Switch in Cell Phone, DSC, PMP, GPS, PC’s

• Battery Charging Switch

−20 V

−3.7 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

−20

Unit

DSS

Continuous Drain

Current (Note 1)

Steady

State

−3.7

T = 25°C

Continuous Drain

Current (Note 2)

Steady

State

−2.9

T = 25°C

Power Dissipation Steady

(Note 1) State

1.5

0.9

T = 25°C

P−Channel MOSFET

Power Dissipation Steady

T = 25°C

(Note 2)

State

Pulsed Drain Current

t = 10 ms

−15

Operating Junction and Storage

Temperature

T , T

−55 to 150

°C

STG

6 PIN FLIP−CHIP

1.0 x 1.5

Source Current (Body Diode)

−1.1

CASE 499BC

Lead Temperature for Soldering Purposes

(IR/Convection)

250

°C

PIN CONNECTION AND MARKING

DIAGRAM

THERMAL RESISTANCE RATINGS

Rating

Symbol

Max

Unit

Junction−to−Ambient – Steady State

(Note 1)

°C/W

Junction−to−Ambient – Steady State

(Note 2)

133

°C/W

1. Surface−mounted on FR4 board using 1 inch sq pad size

3141 = Specific Device Code

WW = Work Week

(Cu area = 1 in sq [2 oz] including traces)

2. Surface−mounted on FR4 board using 77.3 sq mm min pad, 2 oz Cu.

ORDERING INFORMATION

†

Device

NTVS3141PT2G

Package

Shipping

3000/Tape & Reel

CSP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

March, 2009 − Rev. 0

NTVS3141P/D

12 3 4 5 6

中文翻译

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与NTVS3141P_09相关器件

型号	品牌	获取价格	描述	数据表
NTVS3141PT2G	ONSEMI	获取价格	2900mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1.50 X 1 MM, 0.65 MM HEIGHT, LEAD FREE,C
NTVS4101PT1	ONSEMI	获取价格	TRANSISTOR 3.9 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 766AC, FLIP CHIP-4,
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NTX0	RADIOMETRIX	获取价格	27MHz HF Narrow Band FM TX & RX
NTX2	RADIOMETRIX	获取价格	UHF Narrow Band FM TX & RX
NTX2-434.650-10	RADIOMETRIX	获取价格	UHF Narrow Band FM TX & RX
NTY100N10	ONSEMI	获取价格	Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package
NTY100N10_06	ONSEMI	获取价格	Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
NTY100N10G	ONSEMI	获取价格	Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
NTY100N10TBD	ONSEMI	获取价格	123A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, CASE 340G-02 STYLE 1, TO-3BPL

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