Datasheet > NTZD3152P

NTZD3152P

更新时间： 2024-11-15 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	98K
描述
Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563

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NTZD3152P 数据手册

NTZD3152P

Small Signal MOSFET

−20 V, −430 mA, Dual P−Channel

with ESD Protection, SOT−563

Features

http://onsemi.com

• Low R

Improving System Efficiency

DS(on)

Typ

I Max

(BR)DSS

DS(on)

• Low Threshold Voltage

• ESD Protected Gate

0.5 W @ −4.5 V

0.6 W @ −2.5 V

−20 V

−430 mA

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

1.0 W @ −1.8 V

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

P−Channel

MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol Value Unit

−20

6.0

DSS

TU M G

SOT−563−6

CASE 463A

Gate−to−Source Voltage

Continuous Drain Current

T = 25°C

−430

Steady

State

= Specific Device Code

= Date Code

= Pb−Free Package

T = 85°C

−310

(Note 1)

Power Dissipation

(Note 1)

Steady State

250

(Note: Microdot may be in either location)

PINOUT: SOT−563

Continuous Drain Current

(Note 1)

T = 25°C

−455

−328

280

t v 5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

Pulsed Drain Current

t = 10 ms

−750

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

−350

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Top View

THERMAL RESISTANCE RATINGS

ORDERING INFORMATION

Parameter

Symbol

Max

500

447

Unit

†

Device

Package

Shipping

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

°C/W

NTZD3152PT1G

NTZD3152PT1H

NTZD3152PT5G

NTZD3152PT5H

SOT−563

(Pb−Free)

4000 / Tape & Reel

8000 / Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in. sq. pad size

SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Cu. area = 1.127 in. sq. [1 oz.] including traces).

Publication Order Number:

March, 2010 − Rev. 2

NTZD3152P/D

12 3 4 5

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与NTZD3152P相关器件

型号	品牌	获取价格	描述	数据表
NTZD3152PT1G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT1H	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT5G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT5H	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3154N	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3154NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3154NT2G	ONSEMI	获取价格	双 N 沟道，小信号 MOSFET，20V，540mA，550mΩ
NTZD3154NT5G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3155C	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac
NTZD3155CT1G	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac

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