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NTZS3151PT1H PDF预览

NTZS3151PT1H

更新时间: 2024-11-15 21:21:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 105K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

NTZS3151PT1H 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.69
配置:Single最大漏极电流 (Abs) (ID):0.86 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.21 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)Base Number Matches:1

NTZS3151PT1H 数据手册

 浏览型号NTZS3151PT1H的Datasheet PDF文件第2页浏览型号NTZS3151PT1H的Datasheet PDF文件第3页浏览型号NTZS3151PT1H的Datasheet PDF文件第4页浏览型号NTZS3151PT1H的Datasheet PDF文件第5页 
NTZS3151P  
Small Signal MOSFET  
20 V, 950 mA, PChannel SOT563  
Features  
Low R  
Improving System Efficiency  
Low Threshold Voltage  
http://onsemi.com  
DS(on)  
V
R
DS(on)  
Typ  
I Max  
D
Small Footprint 1.6 x 1.6 mm  
(BR)DSS  
120 mW @ 4.5 V  
144 mW @ 2.5 V  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
20 V  
950 mA  
195 mW @ 1.8 V  
Applications  
PChannel MOSFET  
Load/Power Switches  
D
Battery Management  
Cell Phones, Digital Cameras, PDAs, Pagers, etc.  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
V
DSS  
20  
8.0  
V
V
S
GatetoSource Voltage  
V
GS  
MARKING  
DIAGRAM  
Continuous Drain Current  
(Note 1)  
T = 25°C  
860  
690  
170  
mA  
A
6
Steady  
State  
I
D
T = 70°C  
A
1
TX M G  
Power Dissipation  
(Note 1)  
Steady State  
P
mW  
mA  
SOT5636  
CASE 463A  
D
G
Continuous Drain Current  
(Note 1)  
T = 25°C  
A
950  
760  
210  
TX  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
t v 5 s  
I
D
T = 70°C  
A
Power Dissipation  
(Note 1)  
t v 5 s  
P
mW  
D
(Note: Microdot may be in either location)  
Pulsed Drain Current  
t = 10 ms  
I
4.0  
A
p
DM  
PINOUT: SOT563  
Operating Junction and Storage Temperature  
T ,  
55 to  
150  
°C  
J
T
STG  
D
D
1
2
3
6
5
D
D
Source Current (Body Diode)  
I
360  
mA  
S
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8from case for 10 s)  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
720  
600  
Unit  
4
S
G
JunctiontoAmbient – Steady State (Note 1)  
JunctiontoAmbient – t v 5 s (Note 1)  
°C/W  
R
q
JA  
R
q
JA  
Top View  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 in. sq. pad size  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
(Cu. area = 1.127 in. sq. [1 oz.] including traces).  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
January, 2013 Rev. 3  
NTZS3151P/D  
 

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