Datasheet > NTZD3158P

NTZD3158P

更新时间： 2024-11-16 01:21:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	110K
描述
Dual PâChannel Small Signal MOSFET

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中文翻译

获取价格

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NTZD3158P 数据手册

NTZD3158P

Small Signal MOSFET

−20 V, −430 mA, Dual P−Channel

with ESD Protection, SOT−563

Features

http://onsemi.com

• Low R

Improving System Efficiency

DS(on)

• Low Threshold Voltage

Typ

I Max

(BR)DSS

DS(on)

• ESD Protected Gate

0.5 W @ −4.5 V

0.6 W @ −2.5 V

• Small Footprint 1.6 x 1.6 mm

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

−20 V

−430 mA

1.0 W @ −1.8 V

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

P−Channel

MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

−20

6.0

TJ M G

SOT−563−6

CASE 463A

Gate−to−Source Voltage

Continuous Drain Current

T = 25°C

−430

= Specific Device Code

= Date Code

= Pb−Free Package

Steady

State

T = 85°C

−310

(Note 1)

Power Dissipation

(Note 1)

Steady State

250

(Note: Microdot may be in either location)

PINOUT: SOT−563

Continuous Drain Current

(Note 1)

T = 25°C

−455

−328

280

t v 5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

Pulsed Drain Current

t = 10 ms

−750

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

−350

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Top View

Parameter

Symbol

Max

500

447

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

°C/W

ORDERING INFORMATION

†

Device

NTZD3158PT1G

Package

Shipping

SOT−563

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in. sq. pad size

4000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Cu. area = 1.127 in. sq. [1 oz.] including traces).

Publication Order Number:

April, 2013 − Rev. 0

NTZD3158P/D

12 3 4 5

中文翻译

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与NTZD3158P相关器件

型号	品牌	获取价格	描述	数据表
NTZD3158PT1G	ONSEMI	获取价格	Dual PâChannel Small Signal MOSFET
NTZD5110N	ONSEMI	获取价格	60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
NTZD5110NT1	ONSEMI	获取价格	60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
NTZD5110NT1G	ONSEMI	获取价格	60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
NTZD5110NT5G	ONSEMI	获取价格	双 N 沟道，小信号 MOSFET，带 ESD 保护，60V，310mA，1.6Ω
NT-ZJCAT1-EV4	OMRON	获取价格	Programmable Terminals
NTZS3151P	ONSEMI	获取价格	Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563
NTZS3151PT1G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563
NTZS3151PT1H	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
NTZS3151PT5G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563

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