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NTZD5110NT5G

更新时间： 2024-11-16 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号场效应晶体管
页数	文件大小	规格书
5页	105K
描述
双 N 沟道，小信号 MOSFET，带 ESD 保护，60V，310mA，1.6Ω

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NTZD5110NT5G 数据手册

NTZD5110N

Small Signal MOSFET

60 V, 310 mA, Dual N−Channel

with ESD Protection, SOT−563

Features

• Low R

• Low Threshold Voltage

• ESD Protected Gate

Improving System Efficiency

DS(on)

http://onsemi.com

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

MAX

I Max

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

310 mA

Applications

• Load/Power Switches

• Driver Circuits: Relays, Lamps, Displays, Memories, etc.

• Battery Management/Battery Operated Systems

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

N−Channel

MOSFET

Gate−to−Source Voltage

±20

294

212

250

Continuous Drain

Current (Note 1)

T = 25°C

Steady

State

MARKING

DIAGRAM

T = 85°C

Power Dissipation

(Note 1)

Steady State

S7 D

Continuous Drain

Current (Note 1)

T = 25°C

310

225

280

SOT−563−6

CASE 463A

tv5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

t = 10 ms

S7 = Specific Device Code

= Date Code

Pulsed Drain Current

590

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

PINOUT: SOT−563

Source Current (Body Diode)

350

260

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Gate−Source ESD Rating (HBM, Method 3015)

ESD

900

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

500

447

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

°C/W

Top View

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu. area = 1.127 in sq [1 oz] including traces).

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

April, 2007 − Rev. 3

NTZD5110N/D

12 3 4 5

中文翻译

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NTZD5110NT5G 替代型号

型号	品牌	替代类型	描述	数据表
NTZD5110NT1G	ONSEMI	类似代替	60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563

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