Datasheet > NTZD3154NT2G

NTZD3154NT2G

更新时间： 2024-11-16 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	140K
描述
双 N 沟道，小信号 MOSFET，20V，540mA，550mΩ

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NTZD3154NT2G 数据手册

NTZD3154N

Small Signal MOSFET

20 V, 540 mA, Dual N−Channel

Features

• Low R

Improving System Efficiency

http://onsemi.com

DS(on)

• Low Threshold Voltage

• Small Footprint 1.6 x 1.6 mm

• ESD Protected Gate

Typ

I Max (Note 1)

(BR)DSS

DS(on)

400 mW @ 4.5 V

500 mW @ 2.5 V

540 mA

• These are Pb−Free Devices

700 mW @ 1.8 V

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

N−Channel

MOSFET

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

MARKING

DIAGRAM

Gate−to−Source Voltage

6.0

Continuous Drain Current

(Note 1)

T = 25°C

540

390

250

Steady

State

T = 85°C

TV M G

Power Dissipation

(Note 1)

SOT−563−6

CASE 463A

Steady State

Continuous Drain Current

(Note 1)

T = 25°C

570

410

280

= Specific Device Code

= Date Code

= Pb−Free Package

t v 5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

t = 10 ms

(Note: Microdot may be in either location)

Pulsed Drain Current

1.5

PINOUT: SOT−563

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

350

260

Lead Temperature for Soldering Purposes

°C

(1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

500

°C/W

(Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

447

Top View

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

(Cu. area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

March, 2006 − Rev. 1

NTZD3154N/D

12 3 4 5

中文翻译

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NTZD3154NT2G 替代型号

型号	品牌	替代类型	描述	数据表
NTZD3154NT5G	ONSEMI	类似代替	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3154NT1G	ONSEMI	类似代替	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel

与NTZD3154NT2G相关器件

型号	品牌	获取价格	描述	数据表
NTZD3154NT5G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3155C	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac
NTZD3155CT1G	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac
NTZD3155CT1H	ONSEMI	获取价格	540mA, 20V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS CO
NTZD3155CT2G	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac
NTZD3155CT5G	ONSEMI	获取价格	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 pac
NTZD3156C	ONSEMI	获取价格	Small Signal MOSFET
NTZD3156CT1G	ONSEMI	获取价格	Small Signal MOSFET
NTZD3156CT2G	ONSEMI	获取价格	Small Signal MOSFET
NTZD3156CT5G	ONSEMI	获取价格	Small Signal MOSFET

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