是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-264AA | 包装说明: | CASE 340G-02 STYLE 1, TO-3BPL, TO-264, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
雪崩能效等级(Eas): | 500 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 123 A |
最大漏极电流 (ID): | 123 A | 最大漏源导通电阻: | 0.01 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-264AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 313 W |
最大脉冲漏极电流 (IDM): | 369 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn80Pb20) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTY100N10G | ONSEMI |
类似代替 |
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTY100N10_06 | ONSEMI |
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Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package | |
NTY100N10G | ONSEMI |
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Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package | |
NTY100N10TBD | ONSEMI |
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123A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, CASE 340G-02 STYLE 1, TO-3BPL | |
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Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, | |
NTZD3152PT1G | ONSEMI |
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Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, | |
NTZD3152PT1H | ONSEMI |
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Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, | |
NTZD3152PT5G | ONSEMI |
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Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, | |
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Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, | |
NTZD3154N | ONSEMI |
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Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |