Datasheet > NTY100N10_06

NTY100N10_06

更新时间： 2024-10-02 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	158K
描述
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTY100N10_06 数据手册

NTY100N10

Preferred Device

Power MOSFET 123 A,

100 V N−Channel

Enhancement−Mode TO264

Package

http://onsemi.com

Features

123 A, 100 V

9 mW @ V_GS= 10 V (Typ)

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Avalanche Energy Specified

• IDSS and R

Specified at Elevated Temperature

• Pb−Free Package is Available*

DS(on)

N−Channel

Applications

• PWM Motor Control

• Power Supplies

• Converters

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM &

PIN ASSIGNMENT

Rating

Drain−Source Voltage

Symbol Value

Unit

100

DSS

DGR

Drain−Gate Voltage (R = 1 MW)

Gate−Source Voltage

− Continuous

$20

$40

GSM

NTY100N10

AYYWWG

− Non−Repetitive (t v 10 ms)

Drain Current (Note 1)

− Continuous @ T = 25°C

123

369

TO−264

CASE 340G

STYLE 1

− Pulsed

Total Power Dissipation (Note 1)

Derate above 25°C

313

2.5

Watts

W/°C

Operating and Storage Temperature Range

T , T

−55 to

°C

stg

= Assembly Location

= Year

= Work Week

150

Single Pulse Drain−to−Source

500

= Pb−Free Package

Avalanche Energy − Starting T = 25°C

(V = 80 Vdc, V = 10 Vdc,

Peak I = 100 Apk, L = 0.1 mH, R = 25 W)

ORDERING INFORMATION

Thermal Resistance

− Junction to Case

0.4

°C/W

°C

− Junction to Ambient

Device

Package

Shipping

25 Units/Rail

Maximum Lead Temperature for Soldering

Purposes, 0.125 in from case for 10 seconds

260

NTY100N10

TO−264

NTY100N10G

TO−264

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

(Pb−Free)

1. Pulse Test: Pulse Width = 10 ms, Duty−Cycle = 2%.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

downloadthe ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 2

NTY100N10/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NTY100N10_06相关器件

型号	品牌	获取价格	描述	数据表
NTY100N10G	ONSEMI	获取价格	Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
NTY100N10TBD	ONSEMI	获取价格	123A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, CASE 340G-02 STYLE 1, TO-3BPL
NTZD3151P	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTZD3152P	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT1G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT1H	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT5G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3152PT5H	ONSEMI	获取价格	Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection,
NTZD3154N	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
NTZD3154NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 540 mA, Dual N−Channel

与NTY100N10_06相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

NTY100N10_06

NTY100N10_06 数据手册

与NTY100N10_06相关器件

与NTY100N10_06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTY100N10_06

NTY100N10_06 数据手册

与NTY100N10_06相关器件

与NTY100N10_06相关文章

您还可以找

您在本页遇到什么问题？