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NTE5440 PDF预览

NTE5440

更新时间: 2024-11-18 07:14:03
品牌 Logo 应用领域
NTE 可控硅整流器
页数 文件大小 规格书
3页 25K
描述
Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab

NTE5440 数据手册

 浏览型号NTE5440的Datasheet PDF文件第2页浏览型号NTE5440的Datasheet PDF文件第3页 
NTE5440  
Silicon Controlled Rectifier (SCR)  
800V, 10A, Isolated Tab  
Applications:  
D Temperature Control  
D Motor Control  
D Transformerless Power Supply Regulators  
D Relay and Coil Pulsing  
D Power Supply Crowbar Protection  
Absolute Maximum Ratings:  
Anode to Cathode  
Non–Repetitive Peak Voltages (t 10ms, Note 1), VDSM, VRSM . . . . . . . . . . . . . . . . . . . . . . 800V  
Repetitive Peak Voltages (δ ≤ 0.01), VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V  
Peak Working Voltages, VDWM, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
Continuous Voltages, VD, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
Average On–State Current, IT(AV)  
(Averaged over any 20ms period) up to Th = +74°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A  
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A  
Repetitive Peak On–State Current, ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A  
Non–Repetitive Peak On–State Current, ITSM  
(t = 10ms, Half–Sinewave, TJ = +110°C prior to surge, with Reapplied VRWMmax) . 100A  
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A2s  
Rate of Rise of On–State Current after Triggering, dIT/dt  
(IG = 50mA to IT = 20A, dIG/dt = 50mA/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs  
Gate to Cathode  
Reverse Peak Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Average Power Dissipation (Averaged over any 20ms period), PG(AV) . . . . . . . . . . . . . . . 500mW  
Peak Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W  
Temperatures  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +110°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Maximum Lead Temperature (During Soldering, less than 5sec) . . . . . . . . . . . . . . . . . . . . +275°C  
Note 1. Although not recommended, higher Off–State voltages may be applied without damage, but  
the thyristor may switch into the On–State. The Rate–of–Rise of On–State current should  
not exceed 15A/µs.  

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