M1MA141KT1,
M1MA142KT1
Preferred Device
Single Silicon Switching
Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC−70
package which is designed for low power surface mount applications.
http://onsemi.com
CATHODE
3
Features
• Pb−Free Package is Available
• Fast t , < 3.0 ns
rr
• Low C , < 2.0 pF
D
• Available in 8 mm Tape and Reel
Use M1MA141/2KT1 to order the 7 inch/3000 unit reel
ANODE NO CONNECTION
Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel
1
2
MAXIMUM RATINGS (T = 25°C)
A
MARKING
DIAGRAM
3
Rating
Symbol
Value
40
Unit
Reverse Voltage
M1MA141KT1
M1MA142KT1
V
R
Vdc
1
2
80
xxM
SC−70 (SOT−323)
CASE 419
Peak Reverse Voltage M1MA141KT1
M1MA142KT1
V
RM
40
Vdc
80
STYLE 2
Forward Current
I
100
225
500
mAdc
mAdc
mAdc
F
xx
M
= MH for 141
= MI for 142
= Date Code
Peak Forward Current
Peak Forward Surge Current
I
FM
I
FSM
(Note 1)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
M1MA141KT1
SC−70
3000/Tape & Reel
THERMAL CHARACTERISTICS
M1MA142KT1
SC−70
3000/Tape & Reel
3000/Tape & Reel
Rating
Power Dissipation
Symbol
Max
150
Unit
mW
°C
M1MA142KT1G
SC−70
(Pb−Free)
P
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Junction Temperature
Storage Temperature
1. t = 1 sec
T
J
150
T
stg
−55 ~ +150
°C
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
July, 2004 − Rev. 5
M1MA141KT1/D