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NSVM1MA141WAT1G PDF预览

NSVM1MA141WAT1G

更新时间: 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
4页 50K
描述
40 V Common Anode Switching Diode

NSVM1MA141WAT1G 数据手册

 浏览型号NSVM1MA141WAT1G的Datasheet PDF文件第2页浏览型号NSVM1MA141WAT1G的Datasheet PDF文件第3页浏览型号NSVM1MA141WAT1G的Datasheet PDF文件第4页 
M1MA141KT1,  
M1MA142KT1  
Preferred Device  
Single Silicon Switching  
Diode  
This Silicon Epitaxial Planar Diode is designed for use in ultra high  
speed switching applications. This device is housed in the SC−70  
package which is designed for low power surface mount applications.  
http://onsemi.com  
CATHODE  
3
Features  
Pb−Free Package is Available  
Fast t , < 3.0 ns  
rr  
Low C , < 2.0 pF  
D
Available in 8 mm Tape and Reel  
Use M1MA141/2KT1 to order the 7 inch/3000 unit reel  
ANODE NO CONNECTION  
Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel  
1
2
MAXIMUM RATINGS (T = 25°C)  
A
MARKING  
DIAGRAM  
3
Rating  
Symbol  
Value  
40  
Unit  
Reverse Voltage  
M1MA141KT1  
M1MA142KT1  
V
R
Vdc  
1
2
80  
xxM  
SC−70 (SOT−323)  
CASE 419  
Peak Reverse Voltage M1MA141KT1  
M1MA142KT1  
V
RM  
40  
Vdc  
80  
STYLE 2  
Forward Current  
I
100  
225  
500  
mAdc  
mAdc  
mAdc  
F
xx  
M
= MH for 141  
= MI for 142  
= Date Code  
Peak Forward Current  
Peak Forward Surge Current  
I
FM  
I
FSM  
(Note 1)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
M1MA141KT1  
SC−70  
3000/Tape & Reel  
THERMAL CHARACTERISTICS  
M1MA142KT1  
SC−70  
3000/Tape & Reel  
3000/Tape & Reel  
Rating  
Power Dissipation  
Symbol  
Max  
150  
Unit  
mW  
°C  
M1MA142KT1G  
SC−70  
(Pb−Free)  
P
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction Temperature  
Storage Temperature  
1. t = 1 sec  
T
J
150  
T
stg  
55 ~ +150  
°C  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 5  
M1MA141KT1/D  
 

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