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NSS12200LT1G_09

更新时间： 2024-11-24 10:31:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 120K
描述
12 V, 4.0 A, Low VCE(sat) PNP Transistor

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NSS12200LT1G_09 数据手册

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NSS12200LT1G  
12 V, 4.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
−12 VOLTS  
4.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 65 mW  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
MAXIMUM RATINGS (T = 25°C)  
A
EMITTER  
Rating  
Symbol  
Max  
−12  
Unit  
Vdc  
Vdc  
Vdc  
A
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
3
−12  
1
V
EBO  
−7.0  
−2.0  
−4.0  
2
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
SOT−23 (TO−236)  
CASE 318  
I
A
CM  
STYLE 6  
ESD  
HBM Class 3B  
MM Class C  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
VE M G  
D
T = 25°C  
G
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
1
Thermal Resistance,  
R
q
(Note 1)  
270  
JA  
Junction−to−Ambient  
VE = Specific Device Code  
Total Device Dissipation  
P
(Note 2)  
540  
mW  
M
G
= Date Code*  
= Pb−Free Package  
D
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Thermal Resistance,  
R
q
(Note 2)  
230  
JA  
Junction−to−Ambient  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
710  
mW  
Dsingle  
(Note 3)  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS12200LT1G  
SOT−23  
(Pb−Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
3. Thermal response.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 − Rev. 3  
NSS12200L/D  
 
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