Datasheet > NSBC114EDP6

NSBC114EDP6

更新时间： 2024-11-25 12:02:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	155K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

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数据手册

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NSBC114EDP6 数据手册

MUN5211DW1,

NSBC114EDXV6,

NSBC114EDP6

Dual NPN Bias Resistor

Transistors

R1 = 10 kW, R2 = 10 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

SOT−363

CASE 419B

7A M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

7A M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

SOT−963

CASE 527AD

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

M G

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

7A/A

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5211DW1T1G,

SMUN5211DW1T1G

SOT−363

3,000/Tape & Reel

NSBC114EDXV6T1G

NSBC114EDXV6T5G

NSBC114EDP6T5G

SOT−563

SOT−963

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC114ED/D

12 3 4 5 6 7 8

中文翻译

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与NSBC114EDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC114EDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBC114EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114EDXV6/D	ETC	获取价格	Dual Bias Resistor Transistor
NSBC114EDXV6_06	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T5	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T5	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC114EDXV6T5G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k

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