Datasheet > NSBC114YDP6

NSBC114YDP6

更新时间： 2024-02-03 16:50:45

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	88K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

获取价格

数据手册

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NSBC114YDP6 数据手册

MUN5214DW1,

NSBC114YDXV6,

NSBC114YDP6

Dual NPN Bias Resistor

Transistors

http://onsemi.com

PIN CONNECTIONS

(2)

R1 = 10 kW, R2 = 47 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

(4)

(5)

(6)

MARKING DIAGRAMS

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

SOT−363

CASE 419B

7D M G

Compliant

MAXIMUM RATINGS

(T = 25°C, common for Q and Q , unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

SOT−563

CASE 463A

7D M G

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

IN(fwd)

PMG

SOT−963

CASE 527AD

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

7D/P

Specific Device Code

Date Code*

Pb-Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

(Note: Microdot may be in either location)

MUN5214DW1T1G,

SMUN5214DW1T1G*

SOT−363

3,000 / Tape & Reel

*Date Code orientation may vary depending up-

on manufacturing location.

NSVMUN5214DW1T3G*

SOT−363

SOT−563

10,000 / Tape & Reel

4,000 / Tape & Reel

NSBC114YDXV6T1G

NSVBC114YDXV6T1G

NSBC114YDXV6T5G

NSBC114YDP6T5G

SOT−563

SOT−963

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2014 − Rev. 2

DTC114YD/D

12 3 4 5 6 7 8

中文翻译

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与NSBC114YDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC114YDP6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114YDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114YDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114YDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC114YDXV6T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114YDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC114YDXV6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114YF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBC114YF3T5G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSBC114YPDP6	ONSEMI	获取价格	Complementary Bias Resistor Transistors

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