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NSBC115EDXV6T1 PDF预览

NSBC115EDXV6T1

更新时间： 2024-11-24 12:04:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
9页 130K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSBC115EDXV6T1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：unknownECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.38
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.5 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBC115EDXV6T1 数据手册

 浏览型号NSBC115EDXV6T1的Datasheet PDF文件第2页浏览型号NSBC115EDXV6T1的Datasheet PDF文件第3页浏览型号NSBC115EDXV6T1的Datasheet PDF文件第4页浏览型号NSBC115EDXV6T1的Datasheet PDF文件第5页浏览型号NSBC115EDXV6T1的Datasheet PDF文件第6页浏览型号NSBC115EDXV6T1的Datasheet PDF文件第7页 
NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
Features  
MARKING  
DIAGRAM  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
• These are Pb−Free Devices  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SOT−563  
CASE 463A  
xx M G  
1
1
xx = Device Code (Refer to Page 2)  
M
G
= Date Code  
= Pb−Free Package  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
ORDERING INFORMATION  
1
2
†
Device  
Package  
Shipping  
Rating  
Symbol  
Value  
Unit  
Vdc  
NSBC1xxxDXV6T1  
SOT−563 4000/Tape & Reel  
Collector-Base Voltage  
V
50  
50  
CBO  
CEO  
NSBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
NSBC1xxxDXV6T5  
SOT−563 8000/Tape & Reel  
Characteristic  
(One Junction Heated)  
NSBC1xxxDXV6T5G SOT−563 8000/Tape & Reel  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Device Dissipation; T = 25°C  
P
357 (Note 1)  
2.9 (Note 1)  
mW  
A
D
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
q
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Total Device Dissipation; T = 25°C  
P
D
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 7  
NSBC114EDXV6/D  
 
1234567...9

中文翻译

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NSBC115EDXV6T1 替代型号

型号 品牌 替代类型 描述 数据表
NSBC115EDXV6T1G ONSEMI

类似代替

 Dual NPN Bipolar Digital Transistor (BRT)
NSBC123EPDXV6T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors

与NSBC115EDXV6T1相关器件

型号 品牌 获取价格 描述 数据表
NSBC115EDXV6T1G ONSEMI

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 		Dual NPN Bipolar Digital Transistor (BRT)
NSBC115EDXV6T5G ONSEMI

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC115EPDXV6T1G ONSEMI

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 		Complementary Bias Resistor Transistors R1 =
NSBC115TD ONSEMI

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 		Dual NPN Bias Resistor Transistors
NSBC115TDP6T5G ONSEMI

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 		Dual NPN Bias Resistor Transistors
NSBC115TF3 ONSEMI

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 		Digital Transistors (BRT)
NSBC115TF3T5G ONSEMI

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 		Digital Transistors (BRT)
NSBC123EDXV6 ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
NSBC123EDXV6T1 ONSEMI

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 		Dual Bias Resistor Transistors
NSBC123EDXV6T1 ROCHESTER

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,

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