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NSBC123JPDXV6T5G PDF预览

NSBC123JPDXV6T5G

更新时间： 2024-11-16 01:18:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 172K
描述
Complementary Bias Resistor Transistors

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中文翻译

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NSBC123JPDXV6T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.23
其他特性：BUILT IN BIAS RESISTOR RATIO IS 21.36最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC123JPDXV6T5G 数据手册

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MUN5335DW1,  
NSBC123JPDXV6,  
NSBC123JPDP6  
Complementary Bias  
Resistor Transistors  
R1 = 2.2 kW, R2 = 47 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
Features  
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable*  
(4)  
(5)  
(6)  
MARKING DIAGRAMS  
6
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
SOT−363  
CASE 419B  
35 M G  
G
1
MAXIMUM RATINGS  
A
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
1
2
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
SOT−563  
CASE 463A  
1
35 M G  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
G
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
12  
mAdc  
Vdc  
C
V
IN(fwd)  
D
SOT−963  
CASE 527AD  
M G  
Input Reverse Voltage  
V
5
Vdc  
IN(rev)  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
35/D  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
(Note: Microdot may be in either location)  
MUN5335DW1T1G,  
SMUN5335DW1T1G  
SOT−363  
3,000/Tape & Reel  
*Date Code orientation may vary depending up-  
on manufacturing location.  
MUN5335DW1T2G,  
SMUN5335DW1T2G  
SOT−363  
SOT−563  
3,000/Tape & Reel  
4,000/Tape & Reel  
NSBC123JPDXV6T1G,  
NSVBC123JPDXV6T1G*  
NSBC123JPDXV6T5G  
NSBC123JPDP6T5G  
SOT−563  
SOT−963  
8,000/Tape & Reel  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
March, 2016 − Rev. 3  
DTC123JP/D  
1234567...10

中文翻译

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NSBC123JPDXV6T5G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC115EDXV6T1G ONSEMI

类似代替

 Dual NPN Bipolar Digital Transistor (BRT)
NSBC123JPDXV6T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDP6T5G ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
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 		Dual Bias Resistor Transistors
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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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