Datasheet > NSBC123TPDP6

NSBC123TPDP6

更新时间： 2024-11-15 12:22:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	106K
描述
Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = k

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中文翻译

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NSBC123TPDP6 数据手册

NSBC123TPDP6

Complementary Bias

Resistor Transistors

R1 = 2.2 kW, R2 = 8 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

http://onsemi.com

PIN CONNECTIONS

(2)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

MARKING DIAGRAMS

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SOT−963

CASE 527AD

Compliant

M G

MAXIMUM RATINGS

(T = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)

Specific Device Code

Date Code*

Pb−Free Package

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

CBO

CEO

Vdc

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

−NPN

−PNP

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

NSBC123TPDP6T5G

SOT−963

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2012 − Rev. 0

DTC123TP/D

12 3 4 5 6

中文翻译

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与NSBC123TPDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC123TPDP6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = k
NSBC124EDP6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDP6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC124EDXV6T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDXV6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
NSBC124EF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
NSBC124EPDP6	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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