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NSBC124XPDXV6T1G PDF预览

NSBC124XPDXV6T1G

更新时间： 2024-01-27 23:59:49
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
15页 181K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSBC124XPDXV6T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.76其他特性：BUILT IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.5 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBC124XPDXV6T1G 数据手册

 浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第2页浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第3页浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第4页浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第5页浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第6页浏览型号NSBC124XPDXV6T1G的Datasheet PDF文件第7页 
NSBC114EPDXV6T1G,  
NSVBC114EPDXV6T1G Series  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EPDXV6T1  
series, two complementary BRT devices are housed in the SOT−563  
package which is ideal for low power surface mount applications  
where board space is at a premium.  
SOT−563  
CASE 463A  
PLASTIC  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
Features  
2
R
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch Tape and Reel  
• AEC−Q101 Qualified and PPAP Capable  
2
R
1
(4)  
(5)  
(6)  
MARKING DIAGRAM  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
• These are Pb−Free Devices*  
xx MG  
G
xx = Specific Device Code  
(see table on page 2)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
M
G
= Date Code  
= Pb−Free Package  
and Q , − minus sign for Q (PNP) omitted)  
2
1
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
(Note: Microdot may be in either location)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
CEO  
ORDERING INFORMATION  
V
50  
Vdc  
†
Device  
Package  
Shipping  
I
C
100  
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSBC114EPDXV6T1G SOT−563  
4 mm pitch  
4000/Tape & Reel  
NSBC114EPDXV6T5G SOT−563  
2 mm pitch  
8000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 7  
NSBC114EPDXV6/D  
1234567...15

中文翻译

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NSBC124XPDXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC124EPDXV6T5G ONSEMI

类似代替

 Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EPDXV6T1G ONSEMI

类似代替

 Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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 		Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

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