Datasheet > NSBC143TPDXV6T1G

NSBC143TPDXV6T1G

更新时间： 2024-11-15 12:05:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
15页	181K
描述
Dual Bias Resistor Transistors

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中文翻译

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技术参数
数据手册
替代型号

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NSBC143TPDXV6T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F6	针数：	6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	1 week	风险等级：	0.98
其他特性：	BUILT IN BIAS RESISTOR	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	160	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN AND PNP
最大功率耗散 (Abs)：	0.5 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NSBC143TPDXV6T1G 数据手册

NSBC114EPDXV6T1G,

NSVBC114EPDXV6T1G Series

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EPDXV6T1

series, two complementary BRT devices are housed in the SOT−563

package which is ideal for low power surface mount applications

where board space is at a premium.

SOT−563

CASE 463A

PLASTIC

(3)

(2)

(1)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch Tape and Reel

• AEC−Q101 Qualified and PPAP Capable

(4)

(5)

(6)

MARKING DIAGRAM

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

• These are Pb−Free Devices*

xx MG

xx = Specific Device Code

(see table on page 2)

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

= Date Code

= Pb−Free Package

and Q , − minus sign for Q (PNP) omitted)

Rating

Symbol

Value

Unit

Vdc

(Note: Microdot may be in either location)

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

ORDERING INFORMATION

Vdc

†

Device

Package

Shipping

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NSBC114EPDXV6T1G SOT−563

4 mm pitch

4000/Tape & Reel

NSBC114EPDXV6T5G SOT−563

2 mm pitch

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

January, 2012 − Rev. 7

NSBC114EPDXV6/D

12 3 4 5 6 7...15

中文翻译

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NSBC143TPDXV6T1G 替代型号

型号	品牌	替代类型	描述	数据表
NSBC114YPDXV6T1G	ONSEMI	类似代替	Dual Bias Resistor Transistors
NSBC114YDXV6T1G	ONSEMI	类似代替	Dual NPN Bias Resistor Transistors
NSBC114EDXV6T1G	ONSEMI	类似代替	Dual Bias Resistor Transistors

与NSBC143TPDXV6T1G相关器件

型号	品牌	获取价格	描述	数据表
NSBC143TPDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC143ZDP6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC143ZDP6T5G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSBC143ZDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC143ZDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC143ZDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC143ZDXV6T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSBC143ZDXV6T5	ONSEMI	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC,
NSBC143ZDXV6T5G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
NSBC143ZF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

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