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NSBC144EDXV6T1G PDF预览

NSBC144EDXV6T1G

更新时间： 2024-11-15 12:04:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 161K
描述
Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

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中文翻译

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NSBC144EDXV6T1G 数据手册

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MUN5213DW1,  
NSBC144EDXV6,  
NSBC144EDP6  
Dual NPN Bias Resistor  
Transistors  
R1 = 47 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
NPN Transistors with Monolithic Bias  
Resistor Network  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING DIAGRAMS  
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
6
SOT−363  
CASE 419B  
7C M G  
G
1
MAXIMUM RATINGS  
(T = 25C, common for Q and Q , unless otherwise noted)  
A
1
2
SOT−563  
CASE 463A  
1
7C M G  
G
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
D M G  
SOT−963  
CASE 527AD  
V
G
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
7C/D  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
*Date Code orientation may vary depending  
upon manufacturing location.  
†
Device  
Package  
Shipping  
MUN5213DW1T1G,  
SMUN5213DW1T1G  
SOT−363  
3,000/Tape & Reel  
MUN5213DW1T3G  
NSBC144EDXV6T1G  
NSBC144EDXV6T5G  
NSBC144EDP6T5G  
SOT−363  
SOT−563  
SOT−563  
SOT−963  
10,000/Tape & Reel  
4,000/Tape & Reel  
8,000/Tape & Reel  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTC144ED/D  
12345678

中文翻译

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NSBC144EDXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC144EDXV6T5 ONSEMI

完全替代

 100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC144EDXV6T5G ONSEMI

类似代替

 Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

与NSBC144EDXV6T1G相关器件

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NSBC144EDXV6T5 ROCHESTER

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC144EDXV6T5 ONSEMI

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC144EDXV6T5G ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EF3 ONSEMI

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 		Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
NSBC144EF3T5G ONSEMI

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 		Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
NSBC144EPDP6 ONSEMI

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 		Complementary Bias Resistor Transistors
NSBC144EPDP6T5G ONSEMI

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 		Complementary Bias Resistor Transistors
NSBC144EPDXV6 ONSEMI

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 		Complementary Bias Resistor Transistors
NSBC144EPDXV6T1 ONSEMI

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 		100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC144EPDXV6T1G ONSEMI

获取价格

 		Dual Bias Resistor Transistors

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