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NSBC1XXXDXV6T5G

更新时间： 2024-01-14 18:44:41

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
9页	82K
描述
Dual Bias Resistor Transistors

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中文翻译

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数据手册

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NSBC1XXXDXV6T5G 数据手册

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NSBC114EDXV6T1,

NSBC114EDXV6T5

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low power surface mount applications where board space is at

a premium.

(3)

Q

(2)

(1)

R

R

2

1

1

Q

2

R

2

R

1

(4)

(5)

(6)

NSBC114EDXV6T1

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Lead−Free Solder Plating

• These are Pb−Free Devices

MARKING

DIAGRAM

SOT−563

CASE 463A

PLASTIC

xx M G

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

A

1

1

1

2

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

V

50

50

xx = Device Code (Refer to Page 2)

CBO

M

= Date Code

Collector-Emitter Voltage

Collector Current

V

Vdc

CEO

G

= Pb−Free Package

I

100

mAdc

C

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Characteristic

(One Junction Heated)

Symbol

Max

Unit

†

Device

Package

Shipping

Total Device Dissipation; T = 25°C

P

357 (Note 1)

2.9 (Note 1)

mW

mW/°C

A

D

NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Reel

NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel

NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Reel

NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

R

q

350 (Note 1)

°C/W

JA

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation; T = 25°C

P

500 (Note 1)

4.0 (Note 1)

mW

mW/°C

A

D

Derate above 25°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Thermal Resistance, Junction-to-Ambient

R

q

250 (Note 1)

−55 to +150

°C/W

°C

JA

Junction and Storage Temperature

Range

T , T

J stg

*This package is inherently Pb−Free.

1. FR−4 @ Minimum Pad

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

©

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

May, 2006 − Rev. 6

NSBC114EDXV6/D

12 3 4 5 6 7...9

中文翻译

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与NSBC1XXXDXV6T5G相关器件

型号	品牌	获取价格	描述	数据表
NSBMC096	TI	获取价格	NSBMC096 Burst Memory Controller
NSBMC096-16	NSC	获取价格	NSBMC096-16/-25/-33 Burst Memory Controller
NSBMC096VF	NSC	获取价格	NSBMC096-16/-25/-33 Burst Memory Controller
NSBMC096VF16	NSC	获取价格	IC 16M X 1, DRAM CONTROLLER, PQFP132, PLASTIC, QFP-132, Memory Controller
NSBMC096VF-16	ETC	获取价格	DRAM Controller
NSBMC096VF25	NSC	获取价格	IC 16M X 1, DRAM CONTROLLER, PQFP132, PLASTIC, QFP-132, Memory Controller
NSBMC096VF25	TI	获取价格	16MX1, DRAM CONTROLLER, PQFP132, PLASTIC, QFP-132
NSBMC096VF-25	ETC	获取价格	DRAM Controller
NSBMC096VF30	NSC	获取价格	IC 64M X 1, DRAM CONTROLLER, PQFP132, PLASTIC, QFP-132, Memory Controller
NSBMC096VF-33	ETC	获取价格	DRAM Controller

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