August 1993
NSBMC292TM-16/-25/-33 Burst Memory Controller
General Description
The NSBMC292 Burst Memory Controller is an integrated
circuit which implements all aspects of DRAM control for
high performance systems using an Am29030TM or
Am29035 Processor. The NSBMC292 is functionally equiva-
of one word per two cycles for non-interleaved, per cycle for
two-way interleaved.
The NSBMC292 has been designed to allow maximum flexi-
bility in its application. The full range of processor speeds is
supported for a wide range of DRAM speeds, sizes and or-
ganizations.
lent to the V292BMCTM
.
The on-chip I-cache of these processors serves to partially
decouple throughput from the performance of main memo-
ry, however, a sophisticated memory design is still required
for optimum performance.
Because the bus interface is customized to the
Am29030/35, no glue logic is required. Integration is further
enhanced by providing on-chip, a 24-bit timer and a 5-bit
bus time-out monitor.
Static RAM offers a simple solution. Unfortunately, this solu-
tion is relatively expensive and space consumptive because
of low bit density per device and high cost per bit.
The NSBMC292 is packaged as a 132-pin PQFP with a foot-
print of only 1.3 square inches. It reduces design complexi-
ty, space requirements and is fully derated for loading, tem-
perature and voltage.
From a cost and density point of view, Dynamic RAM is an
attractive alternative. The drawbacks are relatively slow ac-
cess times and the complexity of the control circuitry re-
quired to operate them.
Features
Y
The access time problem is solved if the DRAM is used in
page mode. In this mode, access times rival that of static
RAM. The control circuit problem is resolved by the
NSBMC292.
Interfaces directly to the Am29030/35
Y
Manages page mode dynamic memory devices
Y
Supports DRAMs from 256 kbits to 64 MB
Y
Non-interleaved or two way interleaved operation
The function that the NSBMC292 performs is to optimally
translate the burst access protocol of the Am29030/35 to
the page mode access protocol supported by dynamic
RAMs.
Y
Software-configured operational parameters
Y
Integrated page cache management
Y
On-Chip memory address multiplexer/drivers
Y
24-Bit counter/timer
One or two-way interleaved arrangements of DRAMs are
supported. During burst access, data is accessed at the rate
Y
5-Bit bus watch timer
Y
High-speed/low power CMOS technology
Block Diagram
TL/V/11806–1
Typical System Configuration
This document contains information concerning a product that has been developed by National Semiconductor Corporation/V3 Corp. This information is
intended to help in evaluating this product. National Semiconductor Corporation/V3 Corp. reserves the right to change and improve the specifications of this
product without notice.
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
NSBMC292TM and WATCHDOGTM are trademarks of National Semiconductor Corporation.
Am29030TM is a trademark of Advanced Micro Devices, Sunnyvale, California, U.S.A.
V292BMCTM is a trademark of V3 Corporation.
C
1995 National Semiconductor Corporation
TL/V/11806
RRD-B30M115/Printed in U. S. A.