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NSBC144WPDP6T5G PDF预览

NSBC144WPDP6T5G

更新时间： 2024-09-29 12:22:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 134K
描述
Complementary Bias Resistor Transistors R1 = 47 k, R2 = 22 k

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中文翻译

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NSBC144WPDP6T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.77
其他特性：BUILT IN BIAS RESISTOR RATIO 2.1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.408 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC144WPDP6T5G 数据手册

 浏览型号NSBC144WPDP6T5G的Datasheet PDF文件第2页浏览型号NSBC144WPDP6T5G的Datasheet PDF文件第3页浏览型号NSBC144WPDP6T5G的Datasheet PDF文件第4页浏览型号NSBC144WPDP6T5G的Datasheet PDF文件第5页浏览型号NSBC144WPDP6T5G的Datasheet PDF文件第6页 
NSBC144WPDP6  
Complementary Bias  
Resistor Transistors  
R1 = 47 kW, R2 = 22 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
Features  
R
2
R
1
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
(4)  
(5)  
(6)  
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
MARKING DIAGRAMS  
This Device is Pb-Free, Halogen Free/BFR Free and is RoHS  
Compliant  
SOT−963  
CASE 527AD  
M G  
G
1
MAXIMUM RATINGS  
(T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
A
1
2
T
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
(Note: Microdot may be in either location)  
V
50  
Vdc  
*Date Code orientation may vary depending  
upon manufacturing location.  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSBC144WPDP6T5G  
SOT−963  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTC144WP/D  
123456

中文翻译

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NSBC144WPDP6T5G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC144EPDP6T5G ONSEMI

完全替代

 Complementary Bias Resistor Transistors
PEMD12,115 NXP

功能相似

 PEMD12; PUMB12 - NPN/PNP resistor-equipped tr
NSBC144EPDXV6T1G ONSEMI

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 Dual Bias Resistor Transistors

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