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NSBC144EPDXV6T5 PDF预览

NSBC144EPDXV6T5

更新时间： 2024-09-29 21:09:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
14页 163K
描述
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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NSBC144EPDXV6T5 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.28其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC144EPDXV6T5 数据手册

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NSBC114EPDXV6T1,  
NSBC114EPDXV6T5  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EPDXV6T1  
series, two complementary BRT devices are housed in the SOT-563  
package which is ideal for low power surface mount applications  
where board space is at a premium.  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
•ꢀSimplifies Circuit Design  
•ꢀReduces Board Space  
6
1
•ꢀReduces Component Count  
•ꢀAvailable in 8 mm, 7 inch Tape and Reel  
•ꢀPb-Free Packages are Available  
SOT-563  
CASE 463A  
PLASTIC  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
and Q , - minus sign for Q (PNP) omitted)  
1
MARKING DIAGRAM  
2
1
Rating  
Symbol  
Value  
ā50  
Unit  
xx MG  
G
Collector‐Base Voltage  
Collector‐Emitter Voltage  
Collector Current  
V
CBO  
V
CEO  
Vdc  
Vdc  
ā50  
xx = Specific Device Code  
(see table on page 2)  
I
C
100  
mAdc  
M
= Date Code  
THERMAL CHARACTERISTICS  
G
= Pb-Free Package  
Characteristic  
(One Junction Heated)  
(Note: Microdot may be in either location)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C (Note 1)  
P
D
ORDERING INFORMATION  
357  
2.9  
mW  
mW/°C  
A
Derate above 25°C (Note 1)  
†
Device  
Package  
Shipping  
Thermal Resistance (Note 1)  
Junction‐to‐Ambient  
R
°C/W  
q
JA  
NSBC114EPDXV6T1 SOT-563  
4 mm pitch  
4000/Tape & Reel  
350  
Characteristic  
(Both Junctions Heated)  
NSBC114EPDXV6T5 SOT-563  
2 mm pitch  
8000/Tape & Reel  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C (Note 1)  
P
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
500  
4.0  
mW  
mW/°C  
A
Derate above 25°C (Note 1)  
Thermal Resistance (Note 1)  
Junction‐to‐Ambient  
R
250  
°C/W  
q
JA  
Junction and Storage Temperature  
T , T  
J
-ā55 to +150  
°C  
stg  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR-4 @ Minimum Pad  
©ꢀ Semiconductor Components Industries, LLC, 2008  
January, 2008 - Rev. 4  
1
Publication Order Number:  
NSBC114EPDXV6/D  
 
1234567...14

中文翻译

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NSBC144EPDXV6T5 替代型号

型号 品牌 替代类型 描述 数据表
NSBC144EPDXV6T5G ONSEMI

完全替代

 Complementary Bias Resistor Transistors
NSBC144EPDXV6T1 ONSEMI

完全替代

 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
PEMD12,115 NXP

功能相似

 PEMD12; PUMB12 - NPN/PNP resistor-equipped tr

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