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NSBC144WDXV6T1G PDF预览

NSBC144WDXV6T1G

更新时间： 2024-02-15 22:03:56
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
9页 130K
描述
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL

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中文翻译

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NSBC144WDXV6T1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.51
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC144WDXV6T1G 数据手册

 浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第2页浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第3页浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第4页浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第5页浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第6页浏览型号NSBC144WDXV6T1G的Datasheet PDF文件第7页 
NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
Features  
MARKING  
DIAGRAM  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
• These are Pb−Free Devices  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SOT−563  
CASE 463A  
xx M G  
1
1
xx = Device Code (Refer to Page 2)  
M
G
= Date Code  
= Pb−Free Package  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
ORDERING INFORMATION  
1
2
†
Device  
Package  
Shipping  
Rating  
Symbol  
Value  
Unit  
Vdc  
NSBC1xxxDXV6T1  
SOT−563 4000/Tape & Reel  
Collector-Base Voltage  
V
50  
50  
CBO  
CEO  
NSBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
NSBC1xxxDXV6T5  
SOT−563 8000/Tape & Reel  
Characteristic  
(One Junction Heated)  
NSBC1xxxDXV6T5G SOT−563 8000/Tape & Reel  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Device Dissipation; T = 25°C  
P
357 (Note 1)  
2.9 (Note 1)  
mW  
A
D
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
q
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Total Device Dissipation; T = 25°C  
P
D
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 7  
NSBC114EDXV6/D  
 
1234567...9

中文翻译

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NSBC144WDXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
RN1909FE(TE85L,F) TOSHIBA

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