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RN1909FE(TE85L,F) PDF预览

RN1909FE(TE85L,F)

更新时间： 2024-11-15 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 327K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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RN1909FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.78最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：70元件数量：2
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1909FE(TE85L,F) 数据手册

 浏览型号RN1909FE(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1909FE(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1909FE(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1909FE(TE85L,F)的Datasheet PDF文件第5页浏览型号RN1909FE(TE85L,F)的Datasheet PDF文件第6页 
RN1907FE~RN1909FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN1907FE, RN1908FE, RN1909FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
•
Complementary to RN2907FE to RN2909FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1907FE  
RN1908FE  
RN1909FE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-2N1G  
Weight: 0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1907FE  
to 1909FE  
6
5
4
Collector-emitter voltage  
50  
RN1907FE  
RN1908FE  
RN1909FE  
6
7
Q2  
3
Q1  
Emitter-base voltage  
V
C
V
EBO  
15  
Collector current  
I
100  
mA  
mW  
°C  
C
1
2
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
100  
RN1907FE  
to 1909FE  
T
j
150  
T
−55 to 150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-05  
1
2014-03-01  
123456

中文翻译

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RN1909FE(TE85L,F) 替代型号

型号 品牌 替代类型 描述 数据表
NSBC144WDXV6T1G ONSEMI

功能相似

 Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL

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