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RN1909FS PDF预览

RN1909FS

更新时间： 2024-01-23 23:52:52
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 140K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1909FS 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.49
其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.47最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.1 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN1909FS 数据手册

 浏览型号RN1909FS的Datasheet PDF文件第2页浏览型号RN1909FS的Datasheet PDF文件第3页浏览型号RN1909FS的Datasheet PDF文件第4页浏览型号RN1909FS的Datasheet PDF文件第5页浏览型号RN1909FS的Datasheet PDF文件第6页 
RN1907FS~RN1909FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1907FS, RN1908FS, RN1909FS  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
•
Two devices are incorporated into a fine pitch small mold (6-pin)  
package.  
1
6
5
Incorporating a bias resistor into a transistor reduces parts count.  
2
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
4
3
•
Complementary to RN2907FS~RN2909FS  
Equivalent Circuit and Bias Resistor Values  
C
1. EMITTER1  
(E1)  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
2. BASE1  
(B1)  
3. COLLECTOR2  
(C2)  
RN1907FS  
RN1908FS  
RN1909FS  
10  
22  
47  
47  
47  
22  
4. EMITTER2  
(E2)  
R1  
5. BASE2  
(B2)  
B
fS6  
f
6. COLEECTOR1  
(C1)  
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-1F1D  
Weight: 0.001g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
20  
V
V
CBO  
CEO  
RN1907FS~  
RN1909FS  
Collector-emitter voltage  
20  
RN1907FS  
RN1908FS  
RN1909FS  
6
7
Q2  
3
Q1  
Emitter-base voltage  
V
C
V
EBO  
15  
Collector current  
I
50  
mA  
mW  
°C  
1
2
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
50  
RN1907FS~  
RN1909FS  
T
j
150  
−55~150  
T
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  
123456

中文翻译

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