5秒后页面跳转
RN1910FE(TPL3,F) PDF预览

RN1910FE(TPL3,F)

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 255K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

RN1910FE(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.8最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):120元件数量:2
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN1910FE(TPL3,F) 数据手册

 浏览型号RN1910FE(TPL3,F)的Datasheet PDF文件第2页浏览型号RN1910FE(TPL3,F)的Datasheet PDF文件第3页浏览型号RN1910FE(TPL3,F)的Datasheet PDF文件第4页浏览型号RN1910FE(TPL3,F)的Datasheet PDF文件第5页浏览型号RN1910FE(TPL3,F)的Datasheet PDF文件第6页 
RN1910FE,RN1911FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN1910FE,RN1911FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN2910FE, RN2911FE  
Equivalent Circuit and Bias Resistor Values  
C
R1  
B
JEDEC  
JEITA  
E
TOSHIBA  
2-2N1G  
Weight: 0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
6
5
4
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Q2  
3
Q1  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
1
2
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
100  
C
T
j
150  
T
stg  
55~150  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Note 1: Total rating  
1
2007-11-01  

与RN1910FE(TPL3,F)相关器件

型号 品牌 获取价格 描述 数据表
RN1910FS TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1910FS(TPL3) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
RN1910TE85L TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1910TE85N TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1910TE85R TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1911 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1911(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1911(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1911(TE85R) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN1911,LF(CT TOSHIBA

获取价格

Small Signal Bipolar Transistor