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RN1961(TE85L) PDF预览

RN1961(TE85L)

更新时间： 2024-01-15 07:33:46
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 463K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal

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RN1961(TE85L) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.71其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-G6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1961(TE85L) 数据手册

 浏览型号RN1961(TE85L)的Datasheet PDF文件第2页浏览型号RN1961(TE85L)的Datasheet PDF文件第3页浏览型号RN1961(TE85L)的Datasheet PDF文件第4页浏览型号RN1961(TE85L)的Datasheet PDF文件第5页浏览型号RN1961(TE85L)的Datasheet PDF文件第6页浏览型号RN1961(TE85L)的Datasheet PDF文件第7页 
RN1961~RN1966  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1961,RN1962,RN1963  
RN1964,RN1965,RN1966  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in US6 (ultra super mini type 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2961 to RN2966  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1961  
RN1962  
RN1963  
RN1964  
RN1965  
RN1966  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
―
―
JEITA  
TOSHIBA  
2-2J1B  
Weight: 6.8 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
10  
5
V
V
CBO  
CEO  
RN1961 to 1966  
Collector-emitter voltage  
RN1961 to 1964  
RN1965, 1966  
Emitter-base voltage  
V
V
EBO  
Collector current  
I
100  
mA  
C
Collector power dissipation  
Junction temperature  
P *  
200  
150  
mW  
°C  
C
RN1961 to 1966  
T
j
Storage temperature range  
T
stg  
−55 to150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Equivalent Circuit (Top View)  
1
2010-05-20  
1234567

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