Datasheet > RN1961FE(TE85L)

RN1961FE(TE85L)

更新时间： 2024-11-15 19:59:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	544K
描述
RN1961FE(TE85L)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1961FE(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RN1961FE(TE85L) 数据手册

RN1961FE~RN1966FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FE,RN1962FE,RN1963FE

RN1964FE,RN1965FE,RN1966FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN2961FE to RN2966FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1961FE

RN1962FE

RN1963FE

RN1964FE

RN1965FE

RN1966FE

4.7

JEDEC

―

2.2

4.7

JEITA

TOSHIBA

Weight: 3mg (typ.)

2-2N1A

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

RN1961FE

to 1966FE

Collector-emitter voltage

CEO

RN1961FE

to 1964FE

Emitter-base voltage

EBO

RN1965FE,

1966FE

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN1961FE

to 1966FE

150

stg

−55 to150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2010-05-20

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN1961FE(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
RN1961FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1961FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1961TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1961TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1962	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1962(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1962(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
RN1962(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1962CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1962CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

与RN1961FE(TE85L)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

8
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1961FE(TE85L)

RN1961FE(TE85L) 技术参数

RN1961FE(TE85L) 数据手册

与RN1961FE(TE85L)相关器件

与RN1961FE(TE85L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1961FE(TE85L)

RN1961FE(TE85L) 技术参数

RN1961FE(TE85L) 数据手册

与RN1961FE(TE85L)相关器件

与RN1961FE(TE85L)相关文章

您还可以找

您在本页遇到什么问题？