Datasheet > RN1961(TE85L,F)

RN1961(TE85L,F)

更新时间： 2023-01-02 14:33:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	468K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

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数据手册

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RN1961(TE85L,F) 数据手册

RN1961~RN1966

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2961 to RN2966

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1961

RN1962

RN1963

RN1964

RN1965

RN1966

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1961 to 1966

Collector-emitter voltage

RN1961 to 1964

RN1965, 1966

Emitter-base voltage

EBO

Collector current

100

Collector power dissipation

Junction temperature

P *

200

150

°C

RN1961 to 1966

Storage temperature range

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

2010-05-20

12 3 4 5 6 7

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