Datasheet > 暂无类别数据> RN1961CT

RN1961CT

更新时间： 2024-01-14 22:15:29

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关
页数	文件大小	规格书
8页	198K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

获取价格

数据手册

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RN1961CT 数据手册

RN1961CT~RN1966CT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961CT,RN1962CT,RN1963CT

RN1964CT,RN1965CT,RN1966CT

Switching Applications

Unit: mm

Inverter Circuit Applications

1.0±0.05

0.15±0.03

Interface Circuit Applications

Driver Circuit Applications

６

１

５

２

４

３

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

0.35±0.02

0.075±0.03

0.7±0.03

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN2961CT to RN2966CT

Equivalent Circuit and Bias Resistor Values

(E1)

1.EMITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

(E2)

(B2)

(C2)

(B1)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

6.COLLECTOR１

CST6

RN1961CT

RN1962CT

RN1963CT

RN1964CT

RN1965CT

RN1966CT

4.7

JEDEC

JEITA

―

TOSHIBA

2-1K1A

2.2

4.7

Weight: 1 mg (typ.)

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1961CT

to 1966CT

Collector-emitter voltage

RN1961CT

to 1964CT

EBO

Emitter-base voltage

RN1965CT,

1966CT

Collector current

°C

RN1961CT

RN1966CT

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total rating

2009-04-14

12 3 4 5 6 7 8

中文翻译

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与RN1961CT相关器件

型号	品牌	获取价格	描述	数据表
RN1961CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1961FE	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN1961FE(TE85L)	TOSHIBA	获取价格	RN1961FE(TE85L)
RN1961FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1961FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1961TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1961TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1962	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1962(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1962(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

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