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RN1910FS(TPL3) PDF预览

RN1910FS(TPL3)

更新时间： 2024-11-16 10:47:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
5页 120K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP

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中文翻译

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RN1910FS(TPL3) 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
最大集电极电流 (IC)：0.05 A最小直流电流增益 (hFE)：300
元件数量：2极性/信道类型：NPN
最大功率耗散 (Abs)：0.05 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

RN1910FS(TPL3) 数据手册

 浏览型号RN1910FS(TPL3)的Datasheet PDF文件第2页浏览型号RN1910FS(TPL3)的Datasheet PDF文件第3页浏览型号RN1910FS(TPL3)的Datasheet PDF文件第4页浏览型号RN1910FS(TPL3)的Datasheet PDF文件第5页 
RN1910FS,RN1911FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN1910FS,RN1911FS  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
1.0±0.05  
•
Two devices are incorporated into a fine pitch small mold (6-pin)  
package.  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
•
Incorporating a bias resistor into a transistor reduces parts count.  
1
6
5
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
2
•
Complementary to RN2910FS, RN2911FS  
4
3
Equivalent Circuit and Bias Resistor Values  
1. EMITTER1  
(E1)  
2. BASE1  
(B1)  
3. COLLECTOR2  
(C2)  
4. EMITTER2  
(E2)  
5. BASE2  
(B2)  
fS6  
6. COLEECTOR1  
(C1)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
JEDEC  
JEITA  
―
―
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-1F1D  
V
CBO  
V
CEO  
V
EBO  
20  
20  
V
V
Weight: 0.001g (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
50  
mA  
mW  
°C  
°C  
Equivalent Circuit  
(top view)  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
50  
C
T
150  
−55~150  
j
6
5
4
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
Q2  
3
Q1  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1
2
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector cut-off current  
Symbol  
Test Condition  
= 20 V, I = 0  
Min  
⎯
Typ.  
Max  
100  
100  
⎯
Unit  
nA  
I
V
V
V
⎯
⎯
CBO  
CB  
EB  
CE  
E
Emitter cut-off current  
I
= 5 V, I = 0  
⎯
nA  
EBO  
C
DC current gain  
h
= 5 V, I = 1 mA  
300  
⎯
⎯
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
I
= 5 mA, I = 0.25 mA  
⎯
0.15  
⎯
V
C
B
C
ob  
V
= 10 V, I = 0, f = 1 MHz  
⎯
1.2  
pF  
CB  
E
RN1910FS  
RN1911FS  
3.76  
8
4.7  
10  
5.64  
12  
Input resistor  
R1  
⎯
kΩ  
2007-11-01  
1
12345

中文翻译

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