生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1912AFS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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RN1912FS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
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RN1913AFS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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RN1913FS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
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RN1961 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
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RN1961(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, |
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RN1961(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 |
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RN1961(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, |
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RN1961-71 | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP Gene |
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RN1961CT | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
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