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RN1913AFS PDF预览

RN1913AFS

更新时间： 2024-02-28 11:41:13
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
5页 139K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1913AFS 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.54最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN1913AFS 数据手册

 浏览型号RN1913AFS的Datasheet PDF文件第2页浏览型号RN1913AFS的Datasheet PDF文件第3页浏览型号RN1913AFS的Datasheet PDF文件第4页浏览型号RN1913AFS的Datasheet PDF文件第5页 
RN1912AFS, RN1913AFS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)  
RN1912AFS, RN1913AFS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
0.1±0.05  
1.0±0.05  
0.8±0.05  
0.1±0.05  
•
•
Two devices are incorporated into a fine-pitch, small-mold (6-pin)  
package.  
1
6
5
Incorporating a bias resistor into a transistor reduces the parts count.  
2
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly costs.  
4
3
•
Complementary to the RN2912AFS/RN2913AFS  
Equivalent Circuit and Bias Resistor Values  
C
(E1)  
1. EMITTER1  
2. BASE1  
3. COLLECTOR2  
4. EMITTER2  
5. BASE2  
(B1)  
(C2)  
(E2)  
(B2)  
(C1)  
R1  
6. COLLECTOR1  
fS6  
E
JEDEC  
JEITA  
―
―
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
TOSHIBA  
2-1F1D  
Characteristic  
Symbol  
Rating  
Unit  
Weight: 0.001 g (typ.)  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
50  
50  
V
V
CBO  
CEO  
EBO  
Equivalent Circuit  
(top view)  
5
V
Collector current  
I
80  
mA  
mW  
°C  
°C  
C
6
5
4
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
50  
C
T
j
150  
−55~150  
T
Q2  
3
stg  
Q1  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings.  
1
2
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
V
⎯
⎯
120  
⎯
⎯
⎯
100  
100  
700  
nA  
nA  
CBO  
CB  
EB  
CE  
E
Emitter cutoff current  
DC current gain  
I
= 5 V, I = 0  
C
EBO  
h
= 5 V, I = 1 mA  
FE  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
I
= 5 mA, I = 0.25 mA  
V
⎯
⎯
⎯
0.7  
22  
47  
0.15  
⎯
CE (sat)  
C
B
C
V
= 10 V, I = 0, f = 1 MHz  
pF  
ob  
CB  
E
RN1912AFS  
RN1913AFS  
17.6  
37.6  
26.4  
56.4  
Input resistor  
R1  
⎯
kΩ  
1
2007-11-01  
12345

中文翻译

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