Datasheet > RN1911(TE85L,F)

RN1911(TE85L,F)

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
5页	281K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1911(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1911(TE85L,F) 数据手册

RN1910,RN1911

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1910,RN1911

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2910 and RN2911

Equivalent Circuit

JEDEC

―

JEITA

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

TOSHIBA

2-2J1A

Weight: 6.8 mg (typ.)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

100

150

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

2010-05-19

12 3 4 5

中文翻译

下载PDF

与RN1911(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1911(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN1911,LF(CT	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1911AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1911FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1911FE(TE85L)	TOSHIBA	获取价格	RN1911FE(TE85L)
RN1911FE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1911FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1911FS(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
RN1911TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1911TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

与RN1911(TE85L,F)相关文章

DS1135-8资料手册解读：深入探索高速硅定时电路的特性与应用
2024-07-16

6
GT60N321资料手册解读：深入了解东芝第四代绝缘栅双极晶体管
2024-07-16

7
STS5DNE30L资料手册解读：参数分析、特性与应用
2024-07-15

11
MDU1511资料手册解读：探索这款MOSFET的全面特性
2024-07-15

10

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1911(TE85L,F)

RN1911(TE85L,F) 技术参数

RN1911(TE85L,F) 数据手册

与RN1911(TE85L,F)相关器件

与RN1911(TE85L,F)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1911(TE85L,F)

RN1911(TE85L,F) 技术参数

RN1911(TE85L,F) 数据手册

与RN1911(TE85L,F)相关器件

与RN1911(TE85L,F)相关文章

您还可以找

您在本页遇到什么问题？