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RN1910FS PDF预览

RN1910FS

更新时间: 2024-11-15 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
5页 127K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1910FS 技术参数

生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.49其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:20 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.05 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RN1910FS 数据手册

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RN1910FS,RN1911FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN1910FS,RN1911FS  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
1.0±0.05  
Two devices are incorporated into a fine pitch small mold (6-pin)  
package.  
0.8±0.05  
0.1±0.05  
0.1±0.05  
Incorporating a bias resistor into a transistor reduces parts count.  
1
6
5
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
2
Complementary to RN2910FS, RN2911FS  
4
3
Equivalent Circuit and Bias Resistor Values  
1. EMITTER1  
(E1)  
2. BASE1  
(B1)  
3. COLLECTOR2  
(C2)  
4. EMITTER2  
(E2)  
5. BASE2  
(B2)  
fS6  
6. COLEECTOR1  
(C1)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
JEDEC  
JEITA  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-1F1D  
V
CBO  
V
CEO  
V
EBO  
20  
20  
V
V
Weight: 0.001g (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
50  
mA  
mW  
°C  
°C  
Equivalent Circuit  
(top view)  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
50  
C
T
150  
55~150  
j
6
5
4
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
Q2  
3
Q1  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1
2
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector cut-off current  
Symbol  
Test Condition  
= 20 V, I = 0  
Min  
Typ.  
Max  
100  
100  
Unit  
nA  
I
V
V
V
CBO  
CB  
EB  
CE  
E
Emitter cut-off current  
I
= 5 V, I = 0  
nA  
EBO  
C
DC current gain  
h
= 5 V, I = 1 mA  
300  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
I
= 5 mA, I = 0.25 mA  
0.15  
V
C
B
C
ob  
V
= 10 V, I = 0, f = 1 MHz  
1.2  
pF  
CB  
E
RN1910FS  
RN1911FS  
3.76  
8
4.7  
10  
5.64  
12  
Input resistor  
R1  
kΩ  
2007-11-01  
1

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