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RN1910 PDF预览

RN1910

更新时间: 2024-11-14 22:29:31
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
5页 167K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1910 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.48最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN1910 数据手册

 浏览型号RN1910的Datasheet PDF文件第2页浏览型号RN1910的Datasheet PDF文件第3页浏览型号RN1910的Datasheet PDF文件第4页浏览型号RN1910的Datasheet PDF文件第5页 
                                                               
                                                               
RN1910,RN1911  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1910,RN1911  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l Including two devices in US6 (ultra super mini type 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2910, RN2911  
Equivalent Circuit  
JEDEC  
EIAJ  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
TOSHIBA  
Weight: 6.8mg  
2-2J1A  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
*: Total rating  
P *  
200  
C
J
150  
j
T
55~150  
stg  
Equivalent Circuit (Top View)  
1
2001-06-07  

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