Datasheet > RN1910,LF(CT

RN1910,LF(CT

更新时间： 2024-11-16 05:53:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	282K
描述
SMALL SIGNAL TRANSISTOR

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中文翻译

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技术参数
数据手册

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RN1910,LF(CT 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	1.65

RN1910,LF(CT 数据手册

RN1910,RN1911

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1910, RN1911

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2910 and RN2911

Equivalent Circuit

JEDEC

―

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

JEITA

TOSHIBA

2-2J1A

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

Weight: 6.8 mg (typ.)

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

100

150

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

Start of commercial production

1990-12

2014-03-01

12 3 4 5

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