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RN1910,LF(CT PDF预览

RN1910,LF(CT

更新时间: 2023-01-03 04:33:00
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 282K
描述
SMALL SIGNAL TRANSISTOR

RN1910,LF(CT 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:1.65

RN1910,LF(CT 数据手册

 浏览型号RN1910,LF(CT的Datasheet PDF文件第2页浏览型号RN1910,LF(CT的Datasheet PDF文件第3页浏览型号RN1910,LF(CT的Datasheet PDF文件第4页浏览型号RN1910,LF(CT的Datasheet PDF文件第5页 
RN1910,RN1911  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1910, RN1911  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
and Driver Circuit Applications  
z Including two devices in US6 (ultra super mini type 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2910 and RN2911  
Equivalent Circuit  
JEDEC  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
JEITA  
TOSHIBA  
2-2J1A  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
50  
Unit  
V
Weight: 6.8 mg (typ.)  
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
50  
V
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
100  
T
150  
j
T
stg  
55 to150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Equivalent Circuit (Top View)  
Start of commercial production  
1990-12  
1
2014-03-01  

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