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RN1910FE(TE85L) PDF预览

RN1910FE(TE85L)

更新时间： 2024-11-15 20:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 255K
描述
RN1910FE(TE85L)

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中文翻译

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RN1910FE(TE85L) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Base Number Matches：1

RN1910FE(TE85L) 数据手册

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RN1910FE,RN1911FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN1910FE,RN1911FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
•
Complementary to RN2910FE, RN2911FE  
Equivalent Circuit and Bias Resistor Values  
C
R1  
B
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-2N1G  
Weight: 0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
6
5
4
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Q2  
3
Q1  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
1
2
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
100  
C
T
j
150  
T
stg  
−55~150  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Note 1: Total rating  
1
2007-11-01  
123456

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