Datasheet > NSBC144EDP6

NSBC144EDP6

更新时间： 2024-11-15 12:04:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	161K
描述
Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

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中文翻译

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数据手册

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NSBC144EDP6 数据手册

MUN5213DW1,

NSBC144EDXV6,

NSBC144EDP6

Dual NPN Bias Resistor

Transistors

R1 = 47 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

MARKING DIAGRAMS

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

SOT−363

CASE 419B

7C M G

MAXIMUM RATINGS

(T = 25C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

7C M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

D M G

SOT−963

CASE 527AD

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

7C/D

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5213DW1T1G,

SMUN5213DW1T1G

SOT−363

3,000/Tape & Reel

MUN5213DW1T3G

NSBC144EDXV6T1G

NSBC144EDXV6T5G

NSBC144EDP6T5G

SOT−363

SOT−563

SOT−963

10,000/Tape & Reel

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC144ED/D

12 3 4 5 6 7 8

中文翻译

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与NSBC144EDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC144EDP6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC144EDXV6T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDXV6T5	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC144EDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC144EDXV6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
NSBC144EF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
NSBC144EPDP6	ONSEMI	获取价格	Complementary Bias Resistor Transistors

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